BSM15GD120DN12 Eupec IGBT Power Module

Eupec BSM15GD120DN12 IGBT Power Module

BSM15GD120DN12 Eupec IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate).An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.

IGBT:

An insulated-gate bipolar transistor (IGBT) module constructed of one or more IGBT devices. IGBTs prized for their effectiveness in power electronics and high switching frequencies. Often these modules can be designed to handle hundreds of amps and voltages that can exceed 1000V, which is an extremely high power capacity. Achieving this high power requires more than one transistor, and modules are a combination of this and another circuitry.

Because they used as switching devices.However, they are common in amplifiers that use pulse width modulation and filters that remove high frequencies. This includes high-power stereo amplifiers and general power supplies.

Features:

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal

Specification:

• Type: Six-Pack
• Vces: 1,200 Volts DC
• Ic: 15 Amps
• Vges +/-: 20
• Ices Max: 1 MilliAmps
• Iges Max: 0.2 MicroAmps
• Vge(th) Min/Max: 6.5 Volts
• Vce(sat) Max: 3 Volts
• Height (mm): 30.5
• Width (mm): 107.5
• Depth (mm): 45
• H x W x D: 1.2 in x 4.2 in x 1.75 in
• Net Weight: 6.4 OZ
• Gross Weight: 6.4 OZ
• Packaging: Tray

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