BSM50GD120DN2E3226 Eupec IGBT Power Module

BSM50GD120DN2E3226 Eupec IGBT Power Module

BSM50GD120DN2E3226 Eupec IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate).An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.

Features:

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal

Specification:

• Type: Six-Pack
• Vces: 1,200 Volts DC
• Ic: 50 Amps
• Vges +/-: 20
• Ices Max: 1 MilliAmps
• Iges Max: 0.2 MicroAmps
• Vge(th) Min/Max: 6.5 Volts
• Vce(sat) Max: 3 Volts
• Height (mm): 30.5
• Width (mm): 107.5
• Depth (mm): 45
• H x W x D: 1.2 in x 4.2 in x 1.75 in
• Net Weight: 6.4 OZ
• Gross Weight: 6.4 OZ
• Packaging: Tray

BSM50GD120DN2E3226 Manual
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