BSM50GD120DN2E3226 Eupec IGBT Power Module
BSM50GD120DN2E3226 Eupec IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate).An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.
Features:
- Power module
- 3-phase full-bridge
- Including fast free-wheel diodes
- Package with insulated metal base plate
- E3226: long terminals, limited current per terminal
Specification:
- Type: Six-Pack
- Vces: 1,200 Volts DC
- Ic: 50 Amps
- Vges +/-: 20
- Ices Max: 1 MilliAmps
- Iges Max: 0.2 MicroAmps
- Vge(th) Min/Max: 6.5 Volts
- Vce(sat) Max: 3 Volts
- Height (mm): 30.5
- Width (mm): 107.5
- Depth (mm): 45
- H x W x D: 1.2 in x 4.2 in x 1.75 in
- Net Weight: 6.4 OZ
- Gross Weight: 6.4 OZ
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Tray