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FP50R12KE3 Eupec IGBT Module

Brand: Infineon
Model: FP50R12KE3

  • Configuration: Hex
  • Maximum Collector Emitter Voltage: 1200 V
  • Maximum Continuous Collector Current: 50 A
  • Maximum Gate Emitter Voltage: ±20 V
  • Mounting: Screw

Condition: Used/Refurbished
Origin: Germany

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FP50R12KE3 Eupec IGBT Module

The FP50R12KE3 Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device.

The Insulated Gate Bipolar Transistor, (IGBT) combines the insulated gate (hence the first part of its name) technology of the MOSFET with the output performance characteristics of a conventional bipolar transistor, (hence the second part of its name).


An insulated-gate bipolar transistor (IGBT) module is constructed of one or more IGBT devices. IGBTs prized for their effectiveness in power electronics and high switching frequencies. Often these modules can be designed to handle hundreds of amps and voltages that can exceed 1000V, which is an extremely high power capacity. Achieving this high power requires more than one transistor, and modules are a combination of this and another circuitry.

IGBT devices are a type of union between the two main transistor technologies: field effect transistors and bipolar junction transistors. They are built with an insulated gate as would be seen in an FET, but the remaining transistor structure more resembles a bipolar transistor, with an emitter and collector for the main flow of current through the device. This allows it to exhibit the advantages available to both techs, namely a high amperage capacity like a BJT and high input impedance and other positive gate characteristics.
Because they used as switching devices.However, they are common in amplifiers that use pulse width modulation and filters that remove high frequencies. This includes high-power stereo amplifiers and general power supplies.


  • Type of IGBT Channel: N-Channel
  • Collector Emitter Breakdown Voltage: 1.6 kV
  •  Emitter Saturation Voltage: 2.5 V
  • Collector Emitter Voltage (VCEO): 1.2 kV
  • Max Collector Current: 80 A
  • Operating Temperature: 125 °C
  • Max Power Dissipation: 360 W
  • Min Operating Temperature: -40 °C
  • Power Dissipation: 360 W
  • Chassis Mount
  • 17 mm
  • 122 mm
  • 62 mm
  • Infineon Technologies
  • 20 V

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