FP50R12KT3 Infineon IGBT Module


Infineon Technology FP50R12KT3 IGBT Silicon Module

Brand: Infineon
Model: FP50R12KT3
Specification:

  • Configuration: Hex
  • Maximum Collector Emitter Voltage: 1200 V
  • Maximum Continuous Collector Current: 75 A
  • Maximum Gate Emitter Voltage: ±20 V
  • Mounting: Screw

Condition: Used
Origin: Germany

FP50R12KT3 Manual
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৳ 8,500.00

FP50R12KT3 Infineon IGBT Module

The FP50R12KT3 Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device.

The Insulated Gate Bipolar Transistor, (IGBT) combines the insulated gate (hence the first part of its name) technology of the MOSFET with the output performance characteristics of a conventional bipolar transistor, (hence the second part of its name).
EconoPIM™ 3 1200 V, 50 A three phase PIM IGBT module with fast TRENCHSTOP™ IGBT3 and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. They are available in Econo2 and Econo3 housing and and also available with Solder- or PressFIT pins. Also available as soft switching, low loss device: FP50R12KE3.

Features:

  • Low stray inductance module design
  • High reliability and power density
  • Copper base plate for optimized heat spread
  • Solderable pins
  • Low switching losses
  • High switching frequency
  • RoHS-compliant modules
  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility
  • Fast, reliable and low cost mounting concept

Specification:

  • Configuration: Hex
  • Maximum Collector Emitter Voltage: 1200 V
  • Continuous Collector Current: 75 A
  •  Gate Emitter Voltage: ±20 V
  • Mounting: Screw
  • Max Collector Current: 80 A
  • Operating Temperature: 125 °C
  • Max Power Dissipation: 360 W
  • Min Operating Temperature: -40 °C
  • Power Dissipation: 360 W

FP50R12KT3 Manual
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