Fuji Electric 2MBI200U4B 120 50


Fuji Electric 2MBI200U4B 120 50 IGBT Module

Brand: Fuji Electric
Model: 2MBI200U4B 120 50
Specification:

  • Transistor Configuration: Series
  • Maximum Continuous Collector Current: 200A
  • Maximum Collector Emitter Voltage: 1200V
  • Channel Type: N

Condition: Used
Origin: Japan
2MBI200U4B 120 50 Manual
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৳ 13,000.00

Fuji Electric 2MBI200U4B 120 50 IGBT

Fuji Electric 2MBI200U4B 120 50 Overview: The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. In switching applications modern devices feature pulse repetition rates well into the ultrasonic range—frequencies which are at least ten times the highest audio frequency handled by the device when used as an analog audio amplifier.

Features:

  • V-Series, 6th Generation Field-Stop
  • U/U4 Series, 5th Generation Field-Stop
  • S-Series, 4th Generation NPT
  • High speed switching
  • Voltage drive
  • Low inductance module structure
  • Application: Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply, Industrial machines such as welding machines.

Specification:

  • Transistor Configuration: Series
  • Maximum Continuous Collector Current: 200A
  • Maximum Collector Emitter Voltage: 1200V
  • Channel Type: N
  • Gate Emitter Voltage: ±20V
  • Mounting Type: Panel Mount
  • Package Type: M233
  • Pin Count: 7
  • Maximum Power Dissipation: 1.04 kW
  • Dimensions: 92 x 45 x 30mm
  • Height: 30mm
  • Length: 92mm
  • Maximum Operating Temperature: +150 °C
  • Width: 45mm

2MBI200U4B 120 50 Manual
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SKU: 6959 Category:

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