Fuji Electric 2MBI300VH 120 50

Fuji Electric 2MBI300VH 120 50 IGBT Module

Fuji Electric 2MBI300VH 120 50 Overview: The Insulated Gate Bipolar Transistor or IGBT a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor. High reliability is required for infrastructure applications, and High Power Module and PrimePACK™ are suitable. Standard products have a conventional product shape, so they are compatible with the products of other companies.

Features: 

• High speed switching
• Voltage drive
• Low inductance module structure
• Application: Inverter for motor drive, AC and DC servo drive amplifier, industrial machines such as welding machine.

Specification:

• Maximum Continuous Collector Current: 360A
• Maximum Collector Emitter Voltage: 1200V
• Channel Type: N
• Configuration: Series
• Mounting Type: Screw Mount
• Package Type: M276
• Pin Count: 7
• Maximum Power Dissipation: 1.6kW
• Maximum Gate Emitter Voltage: ±20V
• Height: 30.5mm
• Length: 108mm
• Width: 62mm
• Maximum Operating Temperature: +150°C

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