Fuji Electric 7MBR25SA120 50 IGBT
Fuji Electric 7MBR25SA120 50 Overview: The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Features:
- Low Vce(sat)
- Compact package
- PCB mount module
- Converter diode bridge dynamic brake circuit
- RoHS compliant
- Applications: Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply
Specification:
- Collector Emitter Voltage V(br)ceo: 1.2kV
- DC Collector Current: 25A
- Module Configuration: Seven
- Number of Pins: 24
- Collector Emitter Voltage Vces: 2.1V
- Power Dissipation Max: 180W
- Transistor Case Style: Module
- Transistor Polarity: N Channel
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