Fuji Electric 7MBR25SA120 50

Fuji Electric 7MBR25SA120 50 IGBT

Fuji Electric 7MBR25SA120 50 Overview: The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Features:

• Low Vce(sat)
• Compact package
• PCB mount module
• Converter diode bridge dynamic brake circuit
• RoHS compliant
• Applications: Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Specification:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• DC Collector Current: 25A
• Module Configuration: Seven
• Number of Pins: 24
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 180W
• Transistor Case Style: Module
• Transistor Polarity: N Channel

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