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Fuji Electric 7MBR25SA120 50


Brand: Fuji electric
Model: 7MBR25SA120 50
Specification:

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • DC Collector Current: 25A
  • Module Configuration: Seven
  • Number of Pins: 24

Condition: Used/Refurbished
Origin: Japan
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Fuji Electric 7MBR25SA120 50 IGBT

Fuji Electric 7MBR25SA120 50 Overview: The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Features:

  • Low Vce(sat)
  • Compact package
  • PCB mount module
  • Converter diode bridge dynamic brake circuit
  • RoHS compliant
  • Applications: Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Specification:

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • DC Collector Current: 25A
  • Module Configuration: Seven
  • Number of Pins: 24
  • Collector Emitter Voltage Vces: 2.1V
  • Power Dissipation Max: 180W
  • Transistor Case Style: Module
  • Transistor Polarity: N Channel

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SKU: 7284 Category:
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