Fuji Electric 7MBR50SD120 50 IGBT
Fuji Electric 7MBR50SD120 50 Overview: The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
The IGBT and diode devices of Fuji electric’s 7th-generation X series that constitute these modules have been made thinner and miniaturized, thereby optimizing the device structure. This has successfully reduced power dissipation in inverter operation compared with conventional products (Fuji Electric’s 6thgeneration V Series), contributing to energy saving and power cost reduction of the equipment on which the module is installed.
Features:
- Low Vce(sat)
- Compact package
- PCB mount module
- Converter diode bridge dynamic brake circuit
- RoHS compliant
- Applications: Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply
Specification:
- Collector Emitter Voltage V(br)ceo: 1.2kV
- DC Collector Current: 50A
- Module Configuration: Seven
- Number of Pins: 24
- Collector Emitter Voltage Vces: 2.1V
- Power Dissipation Max: 150W
- Transistor Case Style: Module
- Transistor Polarity: N Channel