Infineon BSM25GD120DN2E3224

Infineon BSM25GD120DN2E3224 IGBT

BSM25GD120DN2E3224 Eupec IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate).An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.

Specification:

• Type : Six-Pack
• Maximum Collector Emitter Voltage : 1,200 Volts DC
• Maximum Continuous Collector Current : 35A
• Channel type: N
• Gate Emitter Voltage : ±20 V
• Mounting: Screw Mount
• Pin Count: 17

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