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Infineon BSM25GD120DN2E3224


Brand: Infineon
Model: BSM25GD120DN2E3224
Specification:

  • Type : Six-Pack
  • Maximum Collector Emitter Voltage : 1,200 Volts DC
  • Maximum Continuous Collector Current : 35A
  • Channel type: N

Condition: Used/Refurbished
Origin: Japan
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Infineon BSM25GD120DN2E3224 IGBT

BSM25GD120DN2E3224 Eupec IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate).An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.

Specification:

  • Type : Six-Pack
  • Maximum Collector Emitter Voltage : 1,200 Volts DC
  • Maximum Continuous Collector Current : 35A
  • Channel type: N
  • Gate Emitter Voltage : ±20 V
  • Mounting: Screw Mount
  • Pin Count: 17

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SKU: 7770 Category:
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