Semikron SKIIP 30NAB12T1 IGBT
Semikron SKIIP 30NAB12T1 Overview: The Insulated Gate Bipolar Transistor or IGBT consist of a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification:
- Current: 50Amp
- Collector Emitter Voltage Vce: 1200V