Semikron SKIIP 30NAB12T1

Semikron SKIIP 30NAB12T1 IGBT

Semikron SKIIP 30NAB12T1 Overview: The Insulated Gate Bipolar Transistor or IGBT consist of a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specification:

• Current: 50Amp
• Collector Emitter Voltage Vce: 1200V

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